Tuning porous silica nanofibers by colloid electrospinning for dye adsorption. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 2017, 35 Fabrication of radiation hardened SOI with embedded Si nanocrystal by ion-cut technique.
![sio2 xps peak sio2 xps peak](https://openi.nlm.nih.gov/imgs/512/175/3312836/PMC3312836_1556-276X-7-76-4.png)
Yongwei Chang, Shi Cheng, Lihua Dai, Da Chen, Zhongying Xue, Yemin Dong, Xing Wei, Xi Wang.Electronic band structures of undoped and P-doped Si nanocrystals embedded in SiOĢ. Journal of Solid State Chemistry 2019, 272, 21-26. Synthesis of surface-replicated ultra-thin silica hollow nanofibers using structurally different carbon nanofibers as templates. Taegon Kim, Watanabe Naoki, Jin Miyawaki, Joo-Il Park, Chanmin Lee, Hoi-Kyoeng Jung, Min-Seok Jeon, Hyun-Jong Kim, Seong-Ho Yoon.Photocatalytic hydrogen generation using mesoporous silicon nanoparticles: influence of magnesiothermic reduction conditions and nanoparticle aging on the catalytic activity. Understanding the Impact of Hydrogen Activation by SrCe0.8Zr0.2O3−δ Perovskite Membrane Material on Direct Non-Oxidative Methane Conversion. Sichao Cheng, Su Cheun Oh, Mann Sakbodin, Limei Qiu, Yuxia Diao, Dongxia Liu.The Journal of Physical Chemistry B 2006, 110 Depth Profiling of Charging Effect of Si Nanocrystals Embedded in SiO2: A Study of Charge Diffusion among Si Nanocrystals.
![sio2 xps peak sio2 xps peak](https://html.scirp.org/file/1-2610251x5.png)
The Journal of Physical Chemistry C 2013, 117 Built-In Charges and Photoluminescence Stability of 3D Surface-Engineered Silicon Nanocrystals by a Nanosecond Laser and a Direct Current Microplasma. This article is cited by 21 publications. Therefore, differential charging is still the biggest obstacle for extracting size-dependent binding energy shifts with XPS when one uses the oxide peak as the reference. This must be related to the residual differential charging between the silicon nanoclusters and the oxide host. By use of a measured Auger parameter, we estimate the relaxation energy of the Si(nc) in the SiO 2 matrix as −0.4 eV, which yields a −0.6 eV shift in the binding energy of the Si(nc) with respect to that of bulk Si in the opposite direction of the expected quantum size effect.
![sio2 xps peak sio2 xps peak](https://www.jp.xpssimplified.com/_images/element-silicone-xpsspectra.png)
In the case of the sample containing silicon nanoclusters, both Si2p peaks of Si(nc) and host SiO 2 undergo a charging shift that is 1 order of magnitude larger (>15 eV), with no measurable difference between them (i.e., no differential charging between the silicon nanoclusters and the oxide matrix could be detected). This method enables us to induce an additional charging shift of 0.8 eV between the Si2p peaks of the oxide and the underlying silicon, both in static and time-resolved modes, for a silicon sample containing a 6 nm oxide layer. We investigated silicon nanoclusters Si(nc) in a SiO 2 matrix prepared by the plasma-enhanced chemical vapor deposition technique, using X-ray photoelectron spectroscopy (XPS) with external voltage stimuli in both static and pulsed modes.